Large-signal linearity of scaled MOS transistors
نویسندگان
چکیده
منابع مشابه
Small Signal Models of MOS Technology Transistors
In this supplement to formal class lectures, we develop the small signal models for metaloxide-semiconductor field-effect transistor (MOSFET) technologies. Despite the exclusive focus on MOS technologies, the reader will surmise that the fundamental concepts and strategies of small signal modeling presented herewith are generally applicable to bipolar, III-V compound, and other semiconductor de...
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In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for highK dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs....
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ژورنال
عنوان ژورنال: IEEE Journal of Solid-State Circuits
سال: 1987
ISSN: 0018-9200
DOI: 10.1109/jssc.1987.1052714